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Download The IEEE ECE Engineering Project

Title:DESIGN OF MEMS GYROSCOPE USING COMSOL MULTIPHYSICS

. INTRODUCTION TO MEMS

1.1 Introduction to MEMS Technology

“Micromechatronic is the synergistic integration of micro electromechanical systems, electronic technologies and precision mechatronics with high added value.”

Micro-Electro-Mechanical-Systems (MEMS) is the integration of mechanical elements, sensors, actuators & electronics on a Common silicon substrate through micro fabrication technology. They are fabricated using integrated circuit(IC) batch processing techniques and can range in size from micrometers to millimeters. These systems can sense control and actuate on the micro scale and function individually or in arrays to generate effects on the micro scale. It can be difficult for one to imagine the size of MEMS device. The general size of MEMS is on the order of microns .The main characteristic of MEMS is their small size. Due to their size, MEMS cannot be seen with the unaided eye. An optical microscope is usually required for one to be able to see them. MEMS revolutionize silicon based micro electronics with micro machining technology, making possible the realization of complete System-on-a-chip. MEMS is an enabling technology allowing the development of smart products, augmenting the computational ability of microelectronics with the perception and control capabilities of micro sensors and micro actuators and expanding the space of possible designs and applications.

Microelectronic integrated circuits can be thought of as the “brains” of a system and MEMS augments this decision making capability with eyes and arms to allow Microsystems to sense and control the environment. Sensors gather information from the environment through measuring mechanical, thermal, biological, chemical, optical and magnetic phenomena. The electronics then process the information derived from the sensors and through some decision making capability direct the actuators to respond by moving, positioning, regulating, pumping and filtering, there by controlling the environment for some desired outcome or purpose. Because MEMS devices are manufactured using batch fabrication techniques similar to those used for integrated circuits unprecedented levels of functionality, reliability and sophistication can be placed on a small silicon chip at a relatively low cost.

1.2 Historical background

MEMS have developed in the past decades, especially in the last fifteen years. In the beginning of 1990s, MEMS emerged with the aid of the development of integrated circuit (IC) fabrication processes, in which sensors, actuators, and control functions are co fabricated in silicon. Since then, remarkable research progresses have been achieved in MEMS under the strong capital promotions from both government and industries. In addition to the commercialization of some less integrated MEMS devices, such as micro accelerometers, inkjet printer head, micro mirrors for projection, etc., the concepts and feasibility of more complex MEMS devices have been proposed and demonstrated for the applications in such varied fields as micro fluidics, aerospace, biomedical, chemical analysis, wireless communications, data storage, display, optics, etc. Some branches of MEMS, appearing as micro opto electromechanical systems (MOEMS), micro total analysis systems (MTAS), etc., have attracted a great deal of research interests since their potential applications’ market.

The invention of the transistor at Bell Telephone Laboratories in 1947 sparked a fast-growing microelectronic technology. Jack Kilby of Texas Instruments built the first integrated circuit (IC) in 1958 using germanium (Ge) devices. It consisted of one transistor, three resistors, and one capacitor. The IC was implemented on a sliver of Ge that was glued on a glass slide. Later that same year Robert Noyce of Fairchild Semiconductor announced the development of a planar double-diffused Si IC. The complete transition from the original Ge transistors with grown and alloyed junctions to silicon (Si) planar double-diffused devices took about 10 years.

The success of Si as an electronic material was due partly to its wide availability from silicon dioxide (SiO2) (sand), resulting in potentially lower material costs relative to other semiconductors. Since 1970, the complexity of ICs has doubled every two to three years. The minimum dimension of manufactured devices and ICs has decreased from 20 microns to the sub micron levels of today. Current ultra-large-scale-integration (ULSI) technology enables the fabrication of more than 10 million transistors and capacitors on a typical chip.

IC fabrication is dependent upon sensors to provide input from the surrounding environment, just as control systems need actuators (also referred to as transducers) in order to carry out their desired functions. Due to the availability of sand as a material, much effort was put into developing Si processing and characterization tools. These tools are now being used to advance transducer technology. Today's IC technology far outstrips the original sensors and actuators in performance, size, and cost. Attention in this area was first focused on micro sensor (i.e., micro fabricated sensor) development. The first micro sensor, which has also been the most successful, was the Si pressure sensor. In 1954 it was discovered that the piezoresistive effect in Ge and Si had the potential to produce Ge and Si strain gauges with a gauge factor (i.e., instrument sensitivity) 10 to 20 times greater than those based on metal films.

As a result, Si strain gauges began to be developed commercially in 195. The first high-volume pressure sensor was marketed by National Semiconductor in 1974. This sensor included a temperature controller for constant-temperature operation. Improvements in this technology since then have included the utilization of ion implantation for improved control of the piezoresistor fabrication. Si pressure sensors are now a billion-dollar industry.

In 1982s, the term micromachining came into use to designate the fabrication of micromechanical parts (such as pressure-sensor diaphragms or accelerometer suspension beams) for Si micro sensors. The micromechanical parts were fabricated by selectively etching areas of the Si substrate away in order to leave behind the desired geometries. Isotropic etching of Si was developed in the early 1960s for transistor fabrication. Anisotropic etching of Si then came about in 1967.Various etch-stop techniques were subsequently developed to provide further process flexibility.

These techniques also form the basis of the bulk micromachining processing techniques. Bulk micromachining designates the point at which the bulk of the Si substrate is etched away to leave behind the desired micromechanical elements. Bulk micromachining has remained a powerful technique for the fabrication of micromechanical elements. However, the need for flexibility in device design and performance improvement has motivated the development of new concepts and techniques for micromachining. Among these is the sacrificial layer technique, first demonstrated in 1965 by Nathanson and Wickstrom in which a layer of material is deposited between structural layers for mechanical separation and isolation. This layer is removed during the release etch to free the structural layers and to allow mechanical devices to move relative to the substrate. A layer is releasable when a sacrificial layer separates it from the substrate. The application of the sacrificial layer technique to micromachining in 1985 gave rise to surface micromachining, in which the Si substrate is primarily used as a mechanical support upon which the micromechanical elements are fabricated Prior to 1987 these micromechanical structures were limited in motion. During 1987-1988, a turning point was reached in micromachining when, for the first time, techniques for integrated fabrication of mechanisms (i.e. rigid bodies connected by joints for transmitting, controlling, or constraining relative movement) on Si were demonstrated. During a series of three separate workshops on micro dynamics held in 1987, the term MEMS was coined. Equivalent terms for MEMS are micro systems (preferred in Europe) and micro machines (preferred in Japan).

1.3 Fabrication technologies

The three characteristic features of MEMS fabrication technologies are miniaturization, multiplicity, and microelectronics. Miniaturization enables the production of compact, quick-response devices. Microelectronics provides the intelligence to MEMS and allows the monolithic merger of sensors, actuators, and logic to build closed-loop feedback components and systems. The successful miniaturization and multiplicity of traditional electronics systems would not have been possible without IC fabrication technology. Therefore, IC fabrication technology, or micro fabrication, has so far been the primary enabling technology for the development of MEMS. Micro fabrication provides a powerful tool for batch processing and miniaturization of mechanical systems into a dimensional domain not accessible by conventional (machining) techniques. Furthermore, micro fabrication provides an opportunity for integration of mechanical systems with electronics to develop high-performance closed-loop-controlled MEMS.

Advances in IC technology in the last decade have brought about corresponding progress in MEMS fabrication processes. This integration promises to improve the performance of micromechanical devices as well as reduce the cost of manufacturing, packaging, and instrumenting these devices.

1.3.1 IC Fabrication

Any discussion of MEMS requires a basic understanding of IC fabrication technology, or micro fabrication, the primary enabling technology for the development of MEMS. The major steps in IC fabrication technology are film growth, doping, lithography, etching, dicing, and packaging.

Film growth

Usually, a polished Si wafer is used as the substrate, on which a thin film is grown. The film, which may be epitaxial Si, SiO2, silicon nitride (Si3N4), polycrystalline Si (polysilicon), or metal, is used to build both active or passive components and interconnections between circuits.

Doping

To modulate the properties of the device layer, a low and controllable level of an atomic impurity may be introduced into the layer by thermal diffusion or ion implantation

Lithography

A pattern on a mask is then transferred to the film by means of a photosensitive (i.e., light sensitive) chemical known as a photoresist. The process of pattern generation and transfer is called photolithography. A typical mask consists of a glass plate coated with a patterned chromium (Cr) film.

Etching

Next is the selective removal of unwanted regions of a film or substrate for pattern delineation. Wet chemical etching or dry etching may be used. Etch-mask materials are used at various stages in the removal process to selectively prevent those portions of the material from being etched. These materials include SiO2, Si3N4, and hard-baked photoresist.

Dicing

The finished wafer is sawed or machined into small squares, or dice, from which electronic components can be made.

Packaging

The individual sections are then packaged, a process that involves physically locating, connecting, and protecting a device or component. MEMS design is strongly coupled to the packaging requirements, which in turn are dictated by the application environment.

1.3.2 Bulk Micromachining

Bulk micromachining refers to the formation of micro structures by removal of materials from bulk substrates. We said that bulk substrate in wafer form can be silicon, glass, quartz, crystalline Ge, SiC, GaAs, GaP or InP. The methods commonly used to remove excess material are wet and dry etching, allowing varying degree of control on the profile of the final structure.

1. Isotropic and anisotropic wet etching

Wet etching is obtained by immersing the material in a chemical bath that dissolves the surfaces not covered by a protective layer. The main advantages of the technique are that it can be quick, uniform, very selective and cheap. The etching rate and the resulting profile depend on the material, the chemical, the temperature of the bath, the presence of agitation, and the etch stop technique used if any. We have isotropic and anisotropic etching. Isotropic etching happens when the chemical etches the bulk material at the same rate in all directions, while anisotropic etching happens when different etching rate exists along different directions. For substrates made of homogeneous and amorphous material, like glass, isotropic wet etching is usually observed. However, for crystalline materials, e.g. silicon, the etching is either isotropic or anisotropic, depending on the type of chemical used.

In general, isotropic etchers are acids, while anisotropic etchers are alkaline bases. Figure compares isotropic and anisotropic wet etching of silicon. The top-left inset shows isotropic etching of silicon when the bath is agitated ensuring that fresh chemical constantly reaches the bottom of the trench and resulting in a truly isotropic etch. Isotropic wet etching is used for thin layer or when the rounded profile is interesting, to obtain channels for fluids for example. For silicon, the etcher can be HNA, which is a mixture of hydrofluoric acid (HF), nitric acid (HNO3), and acetic acid (CH3COOH). The isotropic etching rate for silicon can reach 80_m=min. Etching under the mask edge is unavoidable with isotropic wet etching. To achieve anisotropic etching of silicon we usually need the right choice of chemicals. The most common are potassium hydroxide (KOH), tetramethyl ammonium hydroxide (TMAH) and ethylene diamine pyrocatechol (EDP).

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